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Freescale Semiconductor Technical Data
Document Number: MRF9100 Rev. 5, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment. * On - Die Integrated Input Match * Typical Performance @ Full GSM Band, 921 to 960 MHz, 26 Volts Output Power, P1dB -- 110 Watts Power Gain @ P1dB -- 16.5 dB Efficiency @ P1dB -- 53% * Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 100 Watts CW Output Power Features * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF9100LR3 MRF9100LSR3
900 MHz, 110 W, 26 V GSM/EDGE LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465 - 06, STYLE 1 NI - 780 MRF9100LR3
CASE 465A - 06, STYLE 1 NI - 780S MRF9100LSR3
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5. +65 - 0.5. +15 175 1.0 - 65 to +150 150 200 Unit Vdc Vdc W W/C C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 1.0 Unit C/W
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF9100LR3 MRF9100LSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M3 (Minimum) C7 (Minimum)
Table 4. Electrical Characteristics (TC = 25C, 50 ohm system unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Drain- Source Breakdown Voltage (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc
On Characteristics
Gate Threshold Voltage (VDS = 10 Vdc, ID = 500 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 800 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) VGS(th) VGS(Q) VDS(on) 2 3 -- -- -- 0.19 4 5 0.5 Vdc Vdc Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 1.0 -- pF
Functional Tests (In Freescale Test Fixture)
Output Power, 1 dB Compression Point, CW (VDD = 26 Vdc, IDQ = 800 mA, f = 960 MHz) Common- Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA, f = 960 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA, f = 960 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 100 W CW, IDQ = 800 mA, f1 = 921 MHz and 960 MHz, f2 = 940 MHz) Third Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 100 W PEP, IDQ = 800 mA, f = Full GSM Band 921 - 960 MHz, Tone Spacing = 100 kHz) 1. Part is internally matched both on input and output. P1dB Gps 100 16 110 17 -- -- W dB
47
51
--
%
IRL -- -- IMD -- -- - 20 - 30 - 10 -- --
dB
dBc
MRF9100LR3 MRF9100LSR3 2 RF Device Data Freescale Semiconductor
C14 R1 VGG R2 RF INPUT C6 R3 Z1 C1 Z2 C2 Z3 C3 Z4 Z5 C5 Z6 C4 DUT C7 C10 Z7 C8 C9 Z8 Z13 Z9 C11 Z10 VDD C15 RF OUTPUT
+
Z11 C12 C13
Z12
Figure 1. MRF9100L Test Circuit Schematic Table 5. MRF9100L Test Circuit Component Designations and Values
Designators C1, C13 C2, C12 C3 C4, C5 C6, C14 C7, C8, C9, C10 C11 C15 R1, R2 R3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Substrate Description 22 pF, 100B Chip Capacitors, ATC #100B220GW 2.2 pF, 100B Chip Capacitors, ATC #100B2R2BW 6.8 pF, 100B Chip Capacitor, ATC #100B6R8CW 10 pF, 100B Chip Capacitors, ATC #100B100GW 33 pF, 100B Chip Capacitors, ATC #100B330JW 4.7 pF, 100B Chip Capacitors, ATC #100B4R7BW 2.7 pF, 100B Chip Capacitor, ATC #100B2R7BW 10 F, 35 V Tantalum Chip Capacitor, Vishay - Sprague #293D106X9035D 10 kW, 1/8 W Chip Resistors (0805) 1 kW, 1/8 W Chip Resistor (0805) 0.495 x 0.087 Microstrip 0.657 x 0.087 Microstrip 0.324 x 0.087 Microstrip 0.429 x 0.087 Microstrip 0.250 x 0.790 Microstrip 0.535 x 0.790 Microstrip 0.312 x 0.790 Microstrip 0.409 x 0.790 Microstrip 0.432 x 0.087 Microstrip 0.220 x 0.087 Microstrip 0.828 x 0.087 Microstrip 0.485 x 0.087 Microstrip 1.602 x 0.087 Microstrip Taconic TLX8, Thickness 0.8 mm
MRF9100LR3 MRF9100LSR3 RF Device Data Freescale Semiconductor 3
R1 R2 C7 C6 C1 R3 C4 WP C2 C3 C5 C8 C9 WP C10
C14
C15
C11
C12
C13
MRF9100
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. MRF9100L Test Circuit Component Layout
MRF9100LR3 MRF9100LSR3 4 RF Device Data Freescale Semiconductor
+
C3 R1
C1
+
C13
VGG
U1
1
R2
P1
R3 T1
R5 + C5 C14 + C4 VDD
R4
R6
C2
Z6 C9
Z7
RF INPUT
C7 Z1 C6 Z2 Z3 C8
Z4 Z9 Z10 C11 Z5 C10 Z8
Z11 Z12 C12 Z13
RF OUTPUT
Figure 3. MRF9100L Demo Board Schematic
MRF9100LR3 MRF9100LSR3 RF Device Data Freescale Semiconductor 5
Table 6. GSM 900 Optimized Demo Board Component Designations and Values
Designators C1 C2, C5 C3, C13, C14 C4 C6 C7 C8 C9, C10 C11 C12 P1 R1 R2 R3 R4 R5 R6 T1 U1 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Substrate Description 1.0 F Chip Capacitor, AVX #08053G105ZATEA (0805) 33 pF Chip Capacitors, AVX #08051J330GBT, ACCU - P (0805) 22 F, 35 V Tantalum Chip Capacitors, Kemet #T491x226K035AS4394 220 F, 63 V Electrolytic Capacitor Radial, Philips #13668221 5.6 pF Chip Capacitor, AVX #08051J5R6CBT, ACCU - P (0805) 4.7 pF Chip Capacitor, AVX #08051J4R7CBT, ACCU - P (0805) 22 pF Chip Capacitor, AVX #08051J220GBT, ACCU - P (0805) 3.9 pF Chip Capacitors, AVX #08051J3R9BBT, ACCU - P (0805) 2.2 pF Chip Capacitor, AVX #08051J2R2BBT, ACCU - P (0805) 33 pF, 100B Chip Capacitor, ATC #100B330JW 5.0 kW Potentiometer CMS Cermet multi - turn, Bourns #3224W 10 W, 1/8 W Chip Resistor (0805) 1.0 kW, 1/8 W Chip Resistor (0805) 1.2 kW, 1/8 W Chip Resistor (0805) 2.2 kW, 1/8 W Chip Resistor (0805) 100 W, 1/8 W Chip Resistor (0805) 1.0 W, 1/8 W Chip Resistor (0805) NPN Bipolar Transistor, SOT - 23, #BC847 Voltage Regulator, Micro - 8, #LP2951 0.916 x 0.042 Microstrip 0.169 x 0.042 Microstrip 0.212 x 0.042 Microstrip 0.090 x 0.465 Microstrip 0.465 x 0.842 Microstrip 1.776 x 0.059 Microstrip 1.802 x 0.059 Microstrip 1.094 x 0.592 Microstrip 0.085 x 0.042 Microstrip 0.198 x 0.042 Microstrip 0.253 x 0.191 + 0.292 x 0.061 Microstrip 0.181 x 0.042 Microstrip 0.282 x 0.042 Microstrip Taconic RF35, Thickness 0.5 mm, r = 3.5
MRF9100LR3 MRF9100LSR3 6 RF Device Data Freescale Semiconductor
Vbias
Ground
Vdrain
C1 R1 U1 R2 R4 T1 R3 C2 P1 R5 R6 C13 C9 Strap C7 C8 C6 Strap C10 C11 C12 C3 C4 C5 C14
MRF9100
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 4. MRF9100L Demo Board Component Layout
MRF9100LR3 MRF9100LSR3 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
19 IDQ = 1200 mA G ps , POWER GAIN (dB) 18 IDQ = 1000 mA 17 IDQ = 800 mA IDQ = 600 mA 16 VDD = 26 Vdc f = 920 MHz TC = 25_C 1 10 100 1000 Pout, OUTPUT POWER (WATTS) 160 865 MHz Pout , OUTPUT POWER (WATTS) 140 120 100 80 60 40 20 0 0 1 2 3 4 Pin, INPUT POWER (WATTS) VDD = 26 Vdc IDQ = 800 mA TC = 25_C 5 6 960 MHz 42 865 MHz Pout 35 28 21 14 7 0 , DRAIN EFFICIENCY (%) 960 MHz 49 56
15
Figure 5. Power Gain versus Output Power
Figure 6. Output Power and Efficiency versus Input Power
20 Pout = 30 W G ps , POWER GAIN (dB) Gps 100 W 16 IRL 14 Pout = 30 W VDD = 26 Vdc IDQ = 800 mA TC = 25_C 825 850 875 900
0 IRL, INPUT RETURN LOSS (dB)
19 18 G ps , POWER GAIN (dB) 17 85_C 16 15 14 13 VDD = 26 Vdc IDQ = 800 mA f = 920 MHz 1 10 100 1000 TC = -20_C 25_C
18
-5
-10 -15
12
-20 100 W 925 950 975 -25 1000
10 800
12 Pout, OUTPUT POWER (WATTS)
f, FREQUENCY (MHz)
Figure 7. Power Gain and Input Return Loss versus Frequency
Figure 8. Power Gain versus Output Power
10 VDD = 28 Vdc IDQ = 800 mA f = 945 MHz
50 SPECTRAL REGROWTH (dBc)
-50 -55 -60 -65 -70 -75 @ 600 kHz -80 @ 400 kHz VDD = 28 Vdc IDQ = 800 mA f = 945 MHz
EVM (%)
6 4
30
20
2 0 1 10
EVM
10 0 100
h, DRAIN EFFICIENCY (%)
8
40
-85
0
Pout, OUTPUT POWER (WATTS) AVG.
10 1 Pout, OUTPUT POWER (WATTS) AVG.
100
Figure 9. EVM and Efficiency versus Output Power MRF9100LR3 MRF9100LSR3 8
Figure 10. Spectral Regrowth versus Output Power
RF Device Data Freescale Semiconductor
Zload
f = 840 MHz f = 1000 MHz
Zo = 5
Zsource
f = 1000 MHz
f = 840 MHz
VDD = 26 V, IDQ = 800 mA, Pout = 110 W (CW) f MHz 840 880 920 960 1000 Zsource 2.04 - j0.57 2.20 - j0.16 2.00 + j0.44 2.16 + j0.25 2.62 + j0.25 Zload 1.62 + j1.65 1.88 + j2.45 1.79 + j2.40 1.47 + j1.82 1.58 + j1.52
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 11. Series Equivalent Source and Load Impedance
MRF9100LR3 MRF9100LSR3 RF Device Data Freescale Semiconductor 9
NOTES
MRF9100LR3 MRF9100LSR3 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
3 (FLANGE)
B
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H
(LID)
M
TA
B
M
ccc
M
TA
M
B
M
S
M
(INSULATOR)
ccc C
TA
M
B
M
aaa
M
TA
M
B
M
F E A
(FLANGE)
A
T
SEATING PLANE
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 465 - 06 ISSUE G NI - 780 MRF9100LR3
4X U (FLANGE)
B
1
4X Z (LID)
(FLANGE)
B
2
2X
K
D bbb
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F T
SEATING PLANE
E A
(FLANGE)
A
CASE 465A - 06 ISSUE H NI - 780S MRF9100LSR3
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
MRF9100LR3 MRF9100LSR3 RF Device Data Freescale Semiconductor 11
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MRF9100LR3 MRF9100LSR3
Rev. 12 5, 5/2006 Document Number: MRF9100
RF Device Data Freescale Semiconductor

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